Good integrity of large flat and profiled elements
High mechanical strength
Good electrical conductivity and thermal insulation
High electrical load capacity
Outstanding thermal stability
High purity and low impurity content
Excellent resistance to vibration and corrosion
Easy to operate and simpler to maintain
Flat plate: mainly used for high temperature vacuum sintering furnace and inert gas protection furnace, such as single crystal silicon, polysilicon crystal growth furnace, quartz furnace, vacuum furnace, induction furnace, high frequency furnace and heat balance reaction furnace, heat treatment furnace, hard alloy production, sintering furnace, welding furnace, high pressure furnace and other high temperature furnace body insulation material.
Cylinder: widely used as insulation material for high temperature crystal growth furnaces for monocrystalline silicon, polycrystalline silicon, compound semiconductors, optical fibres, etc.
Physical Characteristics | Unit | Standard Products | High Purity products | Ultra Pure Products | |
Carbon Fiber | PAN 基碳纤维 | PAN 基碳纤维 | PAN 基碳纤维 | ||
Density | g/cm^3 | 0.15-0.17 | 0.15-0.16 | 0.15-0.16 | |
Carbon Content | wt | 99.9 | 99.99 | 99.999 | |
Heat-Treatment Temperature | ℃ | 2000-2400 | 2400 | 2400 | |
Average Thermal Conductivity 25℃ | W/(m·K) | 0.076 | 0.076 | 0.076 | |
Average Thermal Conductivity 1000℃ | W/(m·K) | 0.25 | 0.23 | 0.23 | |
Thermal Expansion Factor 1500℃ | 10-6/℃ | 3.4 | 3.2 | 3 | |
Ash Content | ppm | <200 | <20 | <5 | |
Compressive Strength | Face Direction(5%) | Mpa | 0.236 | 0.225 | 0.225 |
Two-sided Direction | 1.79 | 1.77 | 1.55 | ||
Bending Strength | Face Direction(5%) | Mpa | 0.395 | 0.39 | 0.36 |
Two-sided Direction | 1.33 | 1.20 | 1.15 | ||
Resistivity | Face Direction(5%) | Ω.m | 6.64*10-3 | 5.51*10-3 | 5.28*10-3 |
Two-sided Direction | 7.22*10-4 | 6.73*10-4 | 6.73*10-4 | ||
Usage Environment | Air | ℃ | |||
Vacuum | 2400 | 2400 | 2400 | ||
Inert Gas | 3200 | 3200 | 3200 |
*Custom sizes available on request